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Brand Name : YJJ
Model Number : GS-AB-S
Place of Origin : CHINA
MOQ : 5
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 1501/pcs/pre
Delivery Time : 3-5work days
Packaging Details : Tubes of
Material : gallium nitride base material
Broadband : UVA+UVB+UVC photodiode
Principle : Operating in photovoltaic mode
Packaging : TO-46
Test object : Ultraviolet detection
Product Description:
GS-AB-S GaN-based UV photodiode
Features:
Broad band UVA+UVB+UVC photodiode
Photovoltaic mode operation
TO-46metal housing
Good visible blindness
High responsivity and low dark current
UV index monitoring, UV radiation dose measurement, flame detection
Specification
Parameters | Symbol | Value | Unit |
Maximum ratings | |||
Operation temperature range | Topt | -25-85 | oC |
Storage temperature range | Tsto | -40-85 | oC |
Soldering temperature (3 s) | Tsol | 260 | oC |
Reverse voltage | Vr-max | -10 | V |
General characteristics (25 oC) | |||
Chip size | A | 1 | mm2 |
Dark current (Vr = -1 V) | Id | <1 | nA |
Temperature coefficient (@265 nm) | Tc | 0.05 | %/ oC |
Capacitance (at 0 V and 1 MHz) | Cp | 18 | pF |
Spectral response characteristics (25 oC) | |||
Wavelength of peak responsivity | λ p | 355 | nm |
Peak responsivity (at 355 nm) | Rmax | 0.20 | A/W |
Spectral response range (R=0.1×Rmax) | - | 210-370 | nm |
UV-visible rejection ratio (Rmax/R400 nm) | - | >104 | - |
Specifications:
Specifications | Parameters |
Peak wavelength | 355NM |
Light sensitivity | 0.20A/W |
Rise time | 3US |
Test conditions | typical values, Ta=25° |
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UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation Images |