Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance

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ShenzhenYijiajie Electronic Co., Ltd.

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Model Number : S1337-1010BR S1337-1010BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 5000pcs

Delivery Time : 3-5work days

Packaging Details : Paper box

Light-receiving side : 10 × 10 mm

encapsulation : ceramics

refrigeration : Non-cooled

Reverse voltage (max) : 5 V

Spectral response range : 190 to 1100 nm

Dark current (max) : 200 pA

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Silicon photodiodes S1337-1010BQ

It is suitable for precise photometry in the ultraviolet to infrared band

Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance

Maximum Sensitivity Wavelength (Typical)	960 nm
Light sensitivity (typical)	0.5 A/W
Rise Time (Typical)	3 μs
Junction Capacitance (typical)	1100 pF
Noise equivalent power (typical)	1.8×10-14 W/Hz1/2

Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance

Silicon photodiodes S1337-1010BR

It is suitable for precise photometry in the ultraviolet to infrared band

Features
- Low capacitance

Light-receiving side	10 × 10 mm
encapsulation	ceramics
Spectral response range	340 to 1100 nm
Maximum Sensitivity Wavelength (Typical)	960 nm
Light sensitivity (typical)	0.62 A/W
Dark current (max)	200 pA

Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance

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Low Capacitance Silicon Photodiodes

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