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YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

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YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Name: YJJ S1205310 Silicon APD Avalanche Photodiode Short Wavelength Type APD
Brand: HAMAMATSU
Price: 1 USD

Quality YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD for sale

Brand Name : HAMAMATSU

Model Number : S12053-10

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 2200

Delivery Time : 3 days

Packaging Details : piping

Dark current (Max.) : 5 nA

Cut-off frequency (typical value) : 900 MHz

Junction capacitance (typical) : 2 pF

Breakdown voltage (typical value) : 150V

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Product Description:

S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Features:

peculiarity

- High sensitivity and low noise in the UV to visible range

Type Short wavelength type

(Low bias operation)

Receiving surface φ0.2mm

Encapsulation metal

Package category TO-18

Maximum sensitivity wavelength (typical value) 620 nm

Sensitivity wavelength range 200 to 1000 nm

Photosensitivity (typical value) 0.42 A/W

Dark current (Max.) 5 nA

Cut-off frequency (typical value) 900 MHz

Junction capacitance (typical) 2 pF

Breakdown voltage (typical value) 150 V

Breakdown voltage temperature coefficient (typical value) 0.14 V/°C

Gain rate (typical value) 50

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 620 nm, M = 1

Specifications:

Reverse voltage (Max.)	5 nA
Spectral response range	200 to 1000 nm
Maximum sensitivity wavelength (typical value)	620 nm
Gain rate (typical value)	50

YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Product Tags:

Silicon APD Avalanche Photodiode

Short Wavelength Type APD

YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD Images

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