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YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

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YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

Name: YJJ G12180003A InGaAs PIN Photodiode Receiving Surface φ03mm
Brand: HAMAMATSU
Price: 1 USD

Quality YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm for sale

Brand Name : HAMAMATSU

Model Number : G12180-003A

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 2200

Delivery Time : 3 days

Packaging Details : piping

Dark current (Max.) : 0.5 nA

Cut-off frequency (typical value) : 600 MHz

Junction capacitance (typical) : 5 pF

Number of pixels : 1

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Product Description:

G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

Features:

Receiving surface: φ0.3mm

peculiarity

- Low noise, low dark current

- Low junction capacitance

- Receiving surface: φ0.3mm

- Low noise

Receiving surface φ0.3mm

Number of pixels 1

Encapsulation metal

Package category TO-18

Heat dissipation uncooled type

Sensitivity wavelength range 0.9 to 1.7 μm

Maximum sensitivity wavelength (typical value) 1.55 μm

Photosensitivity (typical value) 1.1 A/W

Dark current (Max.) 0.5 nA

Cut-off frequency (typical value) 600 MHz

Junction capacitance (typical) 5 pF

Noise equivalent power (typical value) 4.2×10-15 W/Hz1/2

Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3 dB, junction capacitance: VR = 5V, f = 1MHz

Specifications:

Package category	TO18
Sensitivity wavelength range	0.9 to 1.7 μm
Maximum sensitivity wavelength (typical value)	1.55 μm
Photosensitivity (typical value)	1.1 A/W

YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

Product Tags:

φ0.3mm InGaAs PIN Photodiode

YJJ InGaAs PIN Photodiode

YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm Images

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